2016 IEEE International Electron Devices Meeting (IEDM 2016)
December 3-7, 2016, San Francisco, United States
The following papers report on results from SUPERAID7:
Paper 7.5 - NSP: Physical Compact Model for Stacked-planar and Vertical Gate-All-Around MOSFETs, by O. Rozeau et al.
Paper 17.6 - Vertically Stacked-NanoWires MOSFETs in a Replacement Metal Gate Process with Inner Spacer and SiGe Source/Drain, by S. Barraud et al.