SUPERAID7 - Events

2016 IEEE International Electron Devices Meeting (IEDM 2016)

December 3-7, 2016, San Francisco, United States

The following papers report on results from SUPERAID7:

Paper 7.5 - NSP: Physical Compact Model for Stacked-planar and Vertical Gate-All-Around MOSFETs, by O. Rozeau et al.

Paper 17.6 - Vertically Stacked-NanoWires MOSFETs in a Replacement Metal Gate Process with Inner Spacer and SiGe Source/Drain, by S. Barraud et al.

PATMOS & VARI 2016
International Workshop on Timing Modeling, Organization and Simulation (PATMOS 2016) in conjunction with the European Workshop on CMOS Variability (VARI 2016)

September 21 to 23, 2016, Bremen, Germany

Presentation by J. Lorenz on SUPERAID7