SUPERAID7 - Stability Under Process Variability for Advanced Interconnects and Devices Beyond 7 nm Node

Levels of simulation addressed in SUPERAID7

Among the physical limitations which challenge progress in nanoelectronics for aggressively scaled More Moore, process variability is getting ever more critical. Effects from various sources of process variations, both systematic and stochastic, influence each other and lead to variations of the electrical, thermal and mechanical behavior of devices, interconnects and circuits.

Modelling and simulation (TCAD) offers the unique possibility to investigate the impact of process variations and trace their effects on subsequent process steps and on devices and circuits.

Within SUPERAID7 we will
- establish a software system for the simulation of the impact of systematic and statistical process variations on advanced More Moore devices and circuits, down to the 7 nm node and below, including interconnects,
- improve physical models and extend compact models,
- study advanced device architectures such as TriGate/ΩGate FETs or stacked nanowires, including alternative channel materials.

This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No. 688101.

Invited Presentation at ECS Spring Meeting 2018

In the presentation

J. Lorenz, Process Variability for Devices at and beyond the 7 nm Node

results of SUPERAID7 will be shown.


Plenary talk at SISPAD 2017

In the presentation

J.-C. Barbé et al., Stacked Nanowires/Nanosheets Gate-All-Around MOSFET from Technology to Design Enablement

results of SUPERAID7 were shown.


Workshops at SISPAD 2016

SUPERAID7 co-organized two workshops held on September 5, 2016, in Nuremberg, Germany, linked to SISPAD 2016:

WS1: Simulation of Advanced Interconnects

WS3: Variability-Aware Design Technology Co-Optimization