SUPERAID7 - Stability Under Process Variability for Advanced Interconnects and Devices Beyond 7 nm Node

Among the physical limitations which challenge progress in nanoelectronics for aggressively scaled More Moore, process variability is getting ever more critical. Effects from various sources of process variations, both systematic and stochastic, influence each other and lead to variations of the electrical, thermal and mechanical behavior of devices, interconnects and circuits.

Modelling and simulation (TCAD) offers the unique possibility to investigate the impact of process variations and trace their effects on subsequent process steps and on devices and circuits.

Within SUPERAID7 we therefore

- establish a software system for the simulation of the impact of systematic and statistical process variations on advanced More Moore devices and circuits, down to the 7 nm node and below, including interconnects,

- improve physical models and extend compact models,

- study advanced device architectures such as TriGate/ΩGate FETs or stacked nanowires, including alternative channel materials.


This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No. 688101.


Material from

Workshop "Process Variations from Equipment Effects to Circuit and Design Impacts" held in conjunction with ESSDERC 2018

We provide the presentations for download which allow you to get a good insight into the project results.


Invited Presentation at ECS Spring Meeting 2018

J. Lorenz, Process Variability for Devices at and beyond the 7 nm Node


Presentation at IEDM 2017

S. Barraud et al., Performance and Design Considerations for Gate-All-around Stacked-NanoWires FETs


Plenary talk at

J.-C. Barbé et al., Stacked Nanowires/Nanosheets Gate-All-Around MOSFET from Technology to Design Enablement